| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S2MST Rect, 1000V, 2A DComponents |
7,281,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 1000 V | 1000 V | 2A | -50°C ~ 150°C | 1.15 V @ 2 A | |
|
BAV102,115NEXPERIA BAV102 - RECTIFIER DIOD Rochester Electronics, LLC |
52,154 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 150 V | 150 V | 250mA (DC) | 175°C (Max) | 1.25 V @ 200 mA | |
|
S4M V7GDIODE GEN PURP 1KV 4A DO214AB Taiwan Semiconductor Corporation |
17,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | 1000 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | |
|
1N5295FED .82 MA DO35 Solid State Inc. |
990 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 902mA (DC) | -55°C ~ 200°C | 1.25 V @ 721.6 mA | |
|
1N647D-SI 400V .4A NTE Electronics, Inc |
348 | - |
RFQ |
Datasheet |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 400 V | - | - | 1 V @ 400 mA | |
|
FE6DSF Rect, 200V, 6.00A, 50ns DComponents |
1,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 6A | -50°C ~ 175°C | 980 mV @ 5 A | |
|
S2AST Rect, 50V, 2A DComponents |
474,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 50 V | 50 V | 2A | -50°C ~ 150°C | 1.15 V @ 2 A | |
|
BAS21RECTIFIER DIODE, 0.2A, 200V V(RR Rochester Electronics, LLC |
49,072 | - |
RFQ |
Datasheet |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
|
FERD30H100SHDIODE RECT 100V 30A IPAK STMicroelectronics |
1,893 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | FERD (Field Effect Rectifier Diode) | Obsolete | Through Hole | - | - | - | 100 V | 30A | 175°C (Max) | - | |
|
1N5289FED .43 MA DO35 Solid State Inc. |
990 | - |
RFQ |
Datasheet |
Box | RoHS | - | Standard | Active | Through Hole | - | - | - | 100 V | - | -55°C ~ 200°C | - | |
|
PCDP08120G1_T0_00001TO-220AC, SIC Panjit International Inc. |
2,000 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 418pF @ 1V, 1MHz | 0 ns | 60 µA @ 1200 V | 1200 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A | |
|
RURD620CCS9A-SB822156A, 200V ULTRAFAST DUAL DIODE Rochester Electronics, LLC |
2,500 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
S2GST Rect, 400V, 2A DComponents |
459,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.5 µs | 5 µA @ 400 V | 400 V | 2A | -50°C ~ 150°C | 1.15 V @ 2 A | |
|
1N4004G BKDIODE GEN PURP 400V 1A DO41 Central Semiconductor Corp |
3,504 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 50 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
UF4001 B0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,264 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1N4005 BKDIODE GEN PURPOSE DO41 Central Semiconductor Corp |
3,810 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
UF4001HB0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,257 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
1N4005G BKDIODE GEN PURPOSE DO41 Central Semiconductor Corp |
2,857 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | Through Hole | - | - | - | - | - | - | - | |
|
|
1N4006G BKDIODE GEN PURPOSE DO41 Central Semiconductor Corp |
2,512 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | Through Hole | - | - | - | - | - | - | - | |
|
UF4002 B0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,990 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |