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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CRSH2-10 BKDIODE SCHOTTKY DO15 Central Semiconductor Corp |
2,080 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 170pF @ 4V, 1MHz | - | 500 µA @ 100 V | 100 V | 2A | -65°C ~ 125°C | 850 mV @ 2 A | |
|
SFA806G C0GDIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation |
3,170 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
|
CRSH2-2 BKDIODE SCHOTTKY DO15 Central Semiconductor Corp |
3,608 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 170pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 2A | -65°C ~ 125°C | 500 mV @ 2 A | |
|
|
SFA806GHC0GDIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation |
2,530 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
|
CRSH2-4 BKDIODE SCHOTTKY DO15 Central Semiconductor Corp |
3,828 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 170pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 2A | -65°C ~ 125°C | 500 mV @ 2 A | |
|
|
SFA807G C0GDIODE GEN PURP 500V 8A TO220AC Taiwan Semiconductor Corporation |
3,550 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
|
CRSH2-5 BKDIODE SCHOTTKY DO15 Central Semiconductor Corp |
2,265 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 170pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 2A | -65°C ~ 125°C | 700 mV @ 2 A | |
|
|
SFA807GHC0GDIODE GEN PURP 500V 8A TO220AC Taiwan Semiconductor Corporation |
2,675 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
|
CRSH2-6 BKDIODE SCHOTTKY DO15 Central Semiconductor Corp |
2,580 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 170pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 2A | -65°C ~ 125°C | 700 mV @ 2 A | |
|
|
SFA808GHC0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
2,875 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
|
1N4001 BKDIODE GEN PURPOSE DO41 Central Semiconductor Corp |
2,635 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
SFAF1001G C0GDIODE GEN PURP 50V 10A ITO220AC Taiwan Semiconductor Corporation |
2,549 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A | |
|
|
1N4001G BKDIODE GEN PURPOSE DO41 Central Semiconductor Corp |
2,839 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | Through Hole | - | - | - | - | - | - | - | |
|
|
SFAF1001GHC0GDIODE GEN PURP 50V 10A ITO220AC Taiwan Semiconductor Corporation |
2,549 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A |
|
|
1N4002 BKDIODE GEN PURPOSE DO41 Central Semiconductor Corp |
2,228 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N4002G BKDIODE GEN PURPOSE DO41 Central Semiconductor Corp |
3,493 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | Through Hole | - | - | - | - | - | - | - | |
|
|
1N4003 BKDIODE GEN PURPOSE DO41 Central Semiconductor Corp |
2,779 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N4003G BKDIODE GEN PURPOSE DO41 Central Semiconductor Corp |
3,418 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | Through Hole | - | - | - | - | - | - | - | |
|
UF1MHB0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,751 | - |
RFQ |
Datasheet |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
1N5285FED .27 MA DO35 Solid State Inc. |
3,755 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 297mA (DC) | -55°C ~ 200°C | 1 V @ 237.6 mA |
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