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Diodes-Rectifiers-Single

Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
1N5308 FED 2.7 MA DO35 Solid State Inc.	860	-	RFQ	Datasheet	Box	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	-	100 V	2.97A (DC)	-55°C ~ 200°C	2.15 V @ 2.376 A
TRS10A65F,S1Q PB-F DIODE TO-220-2L V=650 IF=10 Toshiba Semiconductor and Storage	238	-	RFQ		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	36pF @ 650V, 1MHz	0 ns	50 µA @ 650 V	650 V	10A (DC)	175°C (Max)	1.6 V @ 10 A
ES3F SF Rect, 300V, 3.00A, 25ns DComponents	3,000	-	RFQ	Datasheet	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	25 ns	5 µA @ 300 V	300 V	3A	-50°C ~ 150°C	1.3 V @ 3 A
FRL1M Fast Rect. 1000V, 1.00A, 500ns DComponents	81,000	-	RFQ	Datasheet	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	500 ns	5 µA @ 1000 V	1000 V	1A	-50°C ~ 150°C	1.3 V @ 1 A
PMEG4005ESF315 NEXPERIA PMEG4005ESF - RECTIFIER Rochester Electronics, LLC	36,000	-	RFQ	Datasheet	Bulk	RoHS	-	-	Active	-	-	-	-	-	-	-	-
HS3G V7G DIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation	1,072	-	RFQ	Datasheet	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	80pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
1N5290 FED .47 MA DO35 Solid State Inc.	760	-	RFQ	Datasheet	Box	RoHS	-	Standard	Active	Through Hole	-	-	-	100 V	-	-55°C ~ 200°C	-
1N6662 RECT , .5AMP 400V DO7 Solid State Inc.	2,261	-	RFQ		Box	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	-	400 V	500mA	-	-
MUR460-D1-0000 DIODE GEN PURP 600V 4A DO201AD Yangzhou Yangjie Electronic Technology Co.,Ltd	1,050	-	RFQ	Datasheet	Cut Tape (CT),Tape & Box (TB)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	51pF @ 4V, 1MHz	50 ns	2.5 µA @ 600 V	600 V	4A	-55°C ~ 150°C	1.28 V @ 4 A
S2B ST Rect, 100V, 2A DComponents	36,000	-	RFQ	Datasheet	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 100 V	100 V	2A	-50°C ~ 150°C	1.15 V @ 2 A
BAT54FSTR RECTIFIER DIODE, SCHOTTKY, 0.2A, Rochester Electronics, LLC	33,000	-	RFQ	Datasheet	Bulk	RoHS	-	-	Active	-	-	-	-	-	-	-	-
BYC405X-400PQ DUAL HYPERFAST POWER DIODE WeEn Semiconductors	4,098	-	RFQ		Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	10 µA @ 400 V	400 V	10A	150°C	1.5 V @ 5 A
1N1188A NPN SIL TRANS TO3 Solid State Inc.	700	-	RFQ	Datasheet	Box	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	10 µA @ 400 V	400 V	40A	-65°C ~ 200°C	1.19 V @ 90 A
WNSC2D101200WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3,000	-	RFQ	Datasheet	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	490pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A	175°C	1.65 V @ 10 A
NTSB30U100CT-1G RECTIFIER DIODE, SCHOTTKY, 2 ELE Rochester Electronics, LLC	4,841	-	RFQ	Datasheet	Bulk	RoHS	-	-	Active	-	-	-	-	-	-	-	-
S2K ST Rect, 800V, 2A DComponents	3,000	-	RFQ	Datasheet	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 800 V	800 V	2A	-50°C ~ 150°C	1.15 V @ 2 A
BAV19TR RECTIFIER DIODE, 0.2A, 120V, DO- Rochester Electronics, LLC	30,000	-	RFQ	Datasheet	Bulk	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	5pF @ 0V, 1MHz	50 ns	100 nA @ 100 V	120 V	200mA	175°C (Max)	1.25 V @ 200 mA
RFN5BM2STL DIODE GEN PURP 200V 5A TO252 Rohm Semiconductor	1,492	-	RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	25 ns	10 µA @ 200 V	200 V	5A	150°C (Max)	980 mV @ 5 A
1N5305 FED 1.2 MA DO35 Solid State Inc.	640	-	RFQ	Datasheet	Box	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	-	100 V	2.2A (DC)	-55°C ~ 200°C	1.85 V @ 1.76 A
VS-C12ET07T-M3 DIODE SCHOTTKY 650V 12A TO220AC Vishay General Semiconductor - Diodes Division	989	-	RFQ	Datasheet	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Silicon Carbide Schottky	Active	Through Hole	515pF @ 1V, 1MHz	-	65 µA @ 650 V	650 V	12A (DC)	-55°C ~ 175°C	1.7 V @ 12 A