| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FR101G B0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,549 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
FR102G B0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,601 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
SF31GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,359 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 3A (DC) | -55°C ~ 150°C | 950 mV @ 3 A | ||
|
FR103G B0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,991 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
SFAF2008GHDIODE GEN PURP 600V 20A ITO220AC Taiwan Semiconductor Corporation |
2,877 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 20A (DC) | -55°C ~ 150°C | 1.7 V @ 20 A | |
|
FR104G B0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,413 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
MBRF2050HDIODE SCHOTTKY 50V 20A ITO220 Taiwan Semiconductor Corporation |
2,433 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 50 V | 50 V | 20A (DC) | -55°C ~ 150°C | 820 mV @ 20 A | |
|
FR105G B0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,928 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
SFAF2007GHDIODE GEN PURP 500V 20A ITO220AC Taiwan Semiconductor Corporation |
2,342 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 20A (DC) | -55°C ~ 150°C | 1.7 V @ 20 A | |
|
FR106G B0GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
3,923 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
MBR1635GDIODE SCHOTTKY 35V 16A TO220-2 Rochester Electronics, LLC |
3,027 | - |
RFQ |
Datasheet |
Bulk,Tube | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 35 V | 35 V | 16A | -65°C ~ 175°C | 630 mV @ 16 A |
|
SFAF2008GDIODE GEN PURP 600V 20A ITO220AC Taiwan Semiconductor Corporation |
2,592 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 20A (DC) | -55°C ~ 150°C | 1.7 V @ 20 A | ||
|
FR107G B0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
3,188 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
UH2B-E3/5BTDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,193 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A | |
|
GPA805HDIODE GEN PURP 8A 600V TO220AC Taiwan Semiconductor Corporation |
2,164 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
RGP10MHE3/73DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,884 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
FR151G B0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,259 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
BYM12-150HE3/97DIODE GEN PURP 150V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,840 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
MBRS140DIODE SCHOTTKY 40V 1A SMB onsemi |
3,548 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 600 mV @ 1 A | |
|
VS-8ETH03SPBFDIODE ULTRA FAST 300V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,222 | - |
RFQ |
Datasheet |
- | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 35 ns | 20 µA @ 300 V | 300 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A |