| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N3910ARRECTIFIER Microchip Technology |
2,627 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/308 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 150 ns | - | 100 V | 50A | -65°C ~ 150°C | 1.4 V @ 50 A | |
|
SR302HDIODE SCHOTTKY 3A 20V DO-201AD Taiwan Semiconductor Corporation |
3,557 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 3A (DC) | -55°C ~ 125°C | 550 mV @ 3 A | |
|
HERA805GDIODE GEN PURP 8A 400V TO220AC Taiwan Semiconductor Corporation |
3,906 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 8A (DC) | -55°C ~ 150°C | 1.3 V @ 8 A | ||
|
JANTX1N3910RRECTIFIER Microchip Technology |
2,860 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/308 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 200 ns | - | 100 V | 30A | -65°C ~ 150°C | 1.4 V @ 50 A | |
|
MR756GDIODE GP 600V 6A MICRODE BUTTON onsemi |
2,525 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 25 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 900 mV @ 6 A | |
|
FR102GDIODE FAST REC 1A 100V DO-41 Taiwan Semiconductor Corporation |
2,581 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 1.3 V @ 1 A | ||
|
UH2CHE3/5BTDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,903 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
RGP15D-E3/73DIODE GEN PURP 200V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
2,941 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 200 V | 200 V | 1.5A | -65°C ~ 175°C | 1.3 V @ 1.5 A |
|
BYM12-400HE3/97DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,994 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
RSX501LA-20TRDIODE SCHOTTKY 20V 5A PMDT Rohm Semiconductor |
3,146 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 5A | 125°C (Max) | 390 mV @ 3 A | |
|
|
VS-8ETX06-1PBFDIODE GEN PURP 600V 8A TO262 Vishay General Semiconductor - Diodes Division |
3,748 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 24 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 3 V @ 8 A |
|
RF501PS2STBDIODE GEN PURP 200V 5A 8TSOP Rohm Semiconductor |
3,304 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 30 ns | 1 µA @ 200 V | 200 V | 5A | 150°C (Max) | 920 mV @ 5 A | |
|
JANTX1N3911ARECTIFIER Microchip Technology |
2,326 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/308 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 150 ns | - | 200 V | 50A | -65°C ~ 150°C | 1.4 V @ 50 A | |
|
SR103HDIODE SCHOTTKY 30V 1A DO-41 Taiwan Semiconductor Corporation |
3,887 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
JANTX1N3911ARRECTIFIER Microchip Technology |
2,458 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/308 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 150 ns | - | 200 V | 50A | -65°C ~ 150°C | 1.4 V @ 50 A | |
|
MBRF1045DIODE SCHOTTKY 10A 45V ITO220 Taiwan Semiconductor Corporation |
2,630 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A (DC) | -55°C ~ 150°C | 700 mV @ 10 A | ||
|
JANTX1N3912ARECTIFIER Microchip Technology |
3,773 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/308 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 150 ns | - | 300 V | 50A | -65°C ~ 150°C | 1.4 V @ 50 A | |
|
HERAF1005GDIODE GEN PURP 10A 400V IT0-220A Taiwan Semiconductor Corporation |
2,977 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 10A (DC) | -55°C ~ 150°C | 1.3 V @ 10 A | ||
|
JANTX1N3912ARRECTIFIER Microchip Technology |
3,566 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/308 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 150 ns | - | 300 V | 50A | -65°C ~ 150°C | 1.4 V @ 50 A | |
|
MBR1660HDIODE SCHOTTKY 60V 16A TO220 Taiwan Semiconductor Corporation |
2,900 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 16A (DC) | -55°C ~ 150°C | 750 mV @ 16 A |