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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N647UR-1ZENER DIODE Microchip Technology |
3,882 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/240 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | 400 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
SRA2040DIODE SCHOTTKY 40V 20A TO220AC Taiwan Semiconductor Corporation |
2,112 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 20A (DC) | -55°C ~ 125°C | 550 mV @ 20 A | ||
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|
JANTX1N6492ZENER DIODE Microchip Technology |
2,914 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/567 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 450pF @ 5V, 1MHz | - | 20 mA @ 45 V | 45 V | 3A | -65°C ~ 175°C | 680 mV @ 4 A | |
|
|
MBR1635DIODE SCHOTTKY 35V 16A TO220 Taiwan Semiconductor Corporation |
2,235 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 35 V | 35 V | 16A (DC) | -55°C ~ 150°C | 630 mV @ 16 A | ||
|
|
JANTX1N6663USRECTIFIER Microchip Technology |
2,432 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/587 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | 600 V | 500mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
|
HERAF1604GDIODE GEN PURP 16A 300V IT0-220A Taiwan Semiconductor Corporation |
3,456 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 16A (DC) | -55°C ~ 150°C | 1 V @ 16 A | ||
|
|
JANTX1N6672RECTIFIER Microchip Technology |
3,982 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/617 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 10V, 1MHz | 35 ns | 50 µA @ 240 V | 300 V | 15A (DC) | - | 1.55 V @ 20 A | |
|
|
MBR1660DIODE SCHOTTKY 60V 16A TO220 Taiwan Semiconductor Corporation |
3,545 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 16A (DC) | -55°C ~ 150°C | 750 mV @ 16 A | ||
|
|
JANTX1N6672RRECTIFIER Microchip Technology |
3,776 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/617 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 10V, 1MHz | 35 ns | 50 µA @ 240 V | 300 V | 15A (DC) | - | 1.55 V @ 20 A | |
|
|
UGF10JDIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation |
2,245 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 150°C | 2 V @ 10 A | ||
|
|
JANTX1N6673RECTIFIER Microchip Technology |
3,900 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/617 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 10V, 1MHz | 35 ns | 50 µA @ 320 V | 400 V | 15A (DC) | - | 1.55 V @ 20 A | |
|
UH2D-E3/5BTDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,274 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A | |
|
RGP15DHE3/73DIODE GEN PURP 200V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
2,461 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | 5 µA @ 200 V | 200 V | 1.5A | -65°C ~ 175°C | 1.3 V @ 1.5 A |
|
BYM12-50HE3/97DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,480 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
RSX101VA-30TRDIODE SCHOTTKY 30V 1A TUMD2 Rohm Semiconductor |
3,019 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1A | 150°C (Max) | 470 mV @ 1 A | |
|
VS-MBRB745PBFDIODE SCHOTTKY 45V 7.5A D2PAK Vishay General Semiconductor - Diodes Division |
3,654 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 840 mV @ 7.5 A | |
|
1SS400GT2RDIODE GEN PURP 80V 100MA VMD2 Rohm Semiconductor |
3,214 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | 3pF @ 0.5V, 1MHz | 4 ns | 100 nA @ 80 V | 80 V | 100mA | 150°C (Max) | 1.2 V @ 100 mA | |
|
|
UH2DHE3/5BTDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,110 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
|
RGP15G-E3/73DIODE GEN PURP 400V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,904 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 400 V | 400 V | 1.5A | -65°C ~ 175°C | 1.3 V @ 1.5 A |
|
BYS10-25HE3/TR3DIODE SCHOTTKY 25V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,193 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 500 µA @ 25 V | 25 V | 1.5A | -65°C ~ 150°C | 500 mV @ 1 A |
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