| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
MR854GDIODE GEN PURP 400V 3A DO201AD Rochester Electronics, LLC |
3,464 | - |
RFQ |
Datasheet |
Bulk,Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 10 µA @ 400 V | 400 V | 3A | -65°C ~ 125°C | 1.25 V @ 3 A | |
|
UH2BHE3/5BTDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,656 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 35 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
RGP15B-E3/73DIODE GEN PURP 100V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,888 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 100 V | 100 V | 1.5A | -65°C ~ 175°C | 1.3 V @ 1.5 A |
|
BYM12-200HE3/97DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,473 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
RSX101M-30TRDIODE SCHOTTKY 30V 1A PMDU Rohm Semiconductor |
2,699 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 60pF @ 10V, 1MHz | - | 200 µA @ 30 V | 30 V | 1A | 150°C (Max) | 390 mV @ 1 A | |
|
|
VS-8ETH06-1PBFDIODE GEN PURP 600V 8A TO262 Vishay General Semiconductor - Diodes Division |
2,076 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
MR754GDIODE GP 400V 6A MICRODE BUTTON onsemi |
2,284 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 25 µA @ 400 V | 400 V | 6A | -65°C ~ 175°C | 900 mV @ 6 A | |
|
UH2C-E3/5BTDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,190 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A | |
|
RGP15BHE3/73DIODE GEN PURP 100V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,100 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | 5 µA @ 100 V | 100 V | 1.5A | -65°C ~ 175°C | 1.3 V @ 1.5 A |
|
BYM12-300HE3/97DIODE GEN PURP 300V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,927 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
RSX201L-30TE25DIODE SCHOTTKY 30V 2A PMDS Rohm Semiconductor |
2,338 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 30 V | 30 V | 2A | 150°C (Max) | 440 mV @ 2 A | |
|
VS-8ETL06SPBFDIODE GEN PURP 600V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,908 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
|
MBRF10100HDIODE SCHOTTKY 100V 10A ITO220AC Taiwan Semiconductor Corporation |
3,800 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A (DC) | -55°C ~ 150°C | 850 mV @ 10 A | |
|
SR803DIODE SCHOTTKY 8A 30V DO-201AD Taiwan Semiconductor Corporation |
3,224 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 8A (DC) | -55°C ~ 125°C | 550 mV @ 8 A | ||
|
SFAF506GDIODE GEN PURP 5A 400V ITO220AC Taiwan Semiconductor Corporation |
2,722 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 70pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 5A (DC) | -55°C ~ 150°C | 1.3 V @ 5 A | ||
|
SFT12GHDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,935 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A (DC) | -55°C ~ 150°C | 950 mV @ 1 A | |
|
JANTX1N3909ARRECTIFIER Microchip Technology |
3,511 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/308 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 150 ns | - | 50 V | 50A | -65°C ~ 150°C | 1.4 V @ 50 A | |
|
SRA20150DIODE SCHOTTKY 150V 20A TO220AC Taiwan Semiconductor Corporation |
3,751 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 20A (DC) | -55°C ~ 150°C | 1.02 V @ 20 A | ||
|
JANTX1N3909RRECTIFIER Microchip Technology |
2,223 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/308 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 200 ns | - | 50 V | 30A | -65°C ~ 150°C | 1.4 V @ 50 A | |
|
MBRF2045HDIODE SCHOTTKY 45V 20A ITO220 Taiwan Semiconductor Corporation |
3,859 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 45 V | 45 V | 20A (DC) | -55°C ~ 150°C | 750 mV @ 20 A |