| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N5812DIODE GEN PURP 50V 20A DO203AA Microchip Technology |
3,828 | - |
RFQ |
Datasheet |
Bulk | MILITARY, MIL-PRF-19500/478 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Chassis, Stud Mount | 300pF @ 10V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 20A | -65°C ~ 175°C | 950 mV @ 20 A |
|
GP10B-M3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,589 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N5407GP-E3/73DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,461 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 400 V | 800 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
UGB5JT-E3/45DIODE GEN PURP 600V 5A TO263AB Vishay General Semiconductor - Diodes Division |
3,538 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.75 V @ 5 A | |
|
MBRB735HE3/45DIODE SCHOTTKY 35V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,306 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
|
RF1005TF6SFHC9ROHM'S FAST RECOVERY DIODES ARE Rohm Semiconductor |
954 | - |
RFQ |
Datasheet |
Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 10 µA @ 600 V | 600 V | 10A | 150°C (Max) | 1.7 V @ 10 A |
|
1N4531D-SI 100PRV .01A NTE Electronics, Inc |
158 | - |
RFQ |
Datasheet |
Bag | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 20 ns | 500 nA @ 75 V | 75 V | 125mA | -65°C ~ 175°C | 1.2 V @ 100 mA | |
|
BAT750TADIODE SCHOTTKY 40V 750MA SOT23-3 Diodes Incorporated |
2,058 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 25pF @ 25V, 1MHz | 5 ns | 100 µA @ 30 V | 40 V | 750mA (DC) | 125°C (Max) | 490 mV @ 750 mA | |
|
DH60-18ADIODE GEN PURP 1.8KV 60A TO247AD IXYS |
2,944 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 32pF @ 1200V, 1MHz | 230 ns | 200 µA @ 1800 V | 1800 V | 60A | -55°C ~ 150°C | 2.04 V @ 60 A | |
|
FMC-G28SLDIODE GEN PURP 800V 5A TO220F-2L Sanken |
3,918 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 70 ns | 200 µA @ 800 V | 800 V | 5A | -40°C ~ 150°C | 3 V @ 5 A | |
|
JAN1N5814DIODE GEN PURP 100V 20A DO203AA Microchip Technology |
3,673 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Chassis, Stud Mount | 300pF @ 10V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 20A | -65°C ~ 175°C | 950 mV @ 20 A | |
|
GP10DE-M3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,610 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
1N5619GP-E3/73DIODE GEN PURP 600V 1A DO201AD Vishay General Semiconductor - Diodes Division |
2,029 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | 250 ns | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A | |
|
UGB5JTHE3/45DIODE GEN PURP 600V 5A TO263AB Vishay General Semiconductor - Diodes Division |
2,317 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.75 V @ 5 A |
|
MBRB745-E3/45DIODE SCHOTTKY 45V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,496 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
|
FMG-14RDIODE GEN PURP 400V 5A TO220-3 Sanken |
2,531 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 500 µA @ 400 V | 400 V | 5A | -40°C ~ 150°C | 2 V @ 2.5 A | |
|
JANTXV1N5814DIODE GEN PURP 100V 20A DO203AA Microchip Technology |
2,168 | - |
RFQ |
Datasheet |
Bulk | MILITARY, MIL-PRF-19500/478 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Chassis, Stud Mount | 300pF @ 10V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 20A | -65°C ~ 175°C | 950 mV @ 20 A |
|
GP10DHM3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,247 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
1N5627GP-E3/73DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,731 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 200 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1 V @ 3 A | |
|
UGF12HT-E3/45DIODE GEN PURP 500V 12A ITO220AC Vishay General Semiconductor - Diodes Division |
2,912 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 500 V | 500 V | 12A | -55°C ~ 150°C | 1.75 V @ 12 A |