| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UGF15HT-E3/45DIODE GEN PURP 500V 15A ITO220AC Vishay General Semiconductor - Diodes Division |
2,300 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 500 V | 500 V | 15A | -55°C ~ 150°C | 1.75 V @ 15 A | ||
|
MBRF1035-E3/45DIODE SCHOTTKY 35V 10A ITO220AC Vishay General Semiconductor - Diodes Division |
3,469 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
RC 2DIODE GEN PURP 2KV 200MA AXIAL Sanken |
2,444 | - |
RFQ |
Datasheet |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Through Hole | - | 4 µs | 10 µA @ 2000 V | 2000 V | 200mA | -40°C ~ 150°C | 2 V @ 200 mA | |
|
JANTX1N6391DIODE SCHOTTKY 45V 22.5A DO203AA Microchip Technology |
3,814 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/553 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis, Stud Mount | 2000pF @ 5V, 1MHz | - | 1.5 mA @ 45 V | 45 V | 22.5A | -55°C ~ 175°C | 680 mV @ 50 A |
|
GP10JE-M3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,736 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
BY251P-E3/73DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,241 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
MBRF1035HE3/45DIODE SCHOTTKY 35V 10A ITO220AC Vishay General Semiconductor - Diodes Division |
2,994 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 35 V | 35 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
RD 2ADIODE GEN PURP 600V 1.2A AXIAL Sanken |
3,248 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 1.2A | -40°C ~ 150°C | 1.55 V @ 1.2 A | |
|
UGF15HTHE3/45DIODE GEN PURP 500V 15A ITO220AC Vishay General Semiconductor - Diodes Division |
3,257 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 500 V | 500 V | 15A | -55°C ~ 150°C | 1.75 V @ 15 A | ||
|
IDW30G65C5XKSA1DIODE SCHOTTKY 650V 30A TO247-3 Infineon Technologies |
2,687 | - |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 860pF @ 1V, 1MHz | 0 ns | 220 µA @ 650 V | 650 V | 30A (DC) | -55°C ~ 175°C | 1.7 V @ 30 A |
|
S1MHE3_A/IDIODE GEN PURP 1KV 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,947 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q100 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
NSR10F20NXT5GDIODE SCHOTTKY 20V 1A 2DSN onsemi |
1,140,000 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 20 V | 20 V | 1A (DC) | 150°C (Max) | 450 mV @ 1 A | |
|
JANTXV1N6391DIODE SCHOTTKY 45V 22.5A DO203AA Microchip Technology |
2,540 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/553 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis, Stud Mount | 2000pF @ 5V, 1MHz | - | 1.5 mA @ 45 V | 45 V | 22.5A | -55°C ~ 175°C | 680 mV @ 50 A |
|
GP10JHM3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,931 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
EGP10AHM3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,033 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
MBRF1045HE3/45DIODE SCHOTTKY 45V 10A ITO220AC Vishay General Semiconductor - Diodes Division |
2,373 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
RF 1ADIODE GEN PURP 600V 600MA AXIAL Sanken |
2,766 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 400 ns | 10 µA @ 600 V | 600 V | 600mA | -40°C ~ 150°C | 2 V @ 600 mA | |
|
UGF15JT-E3/45DIODE GEN PURP 600V 15A ITO220AC Vishay General Semiconductor - Diodes Division |
2,713 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 600 V | 600 V | 15A | -55°C ~ 150°C | 1.75 V @ 15 A | ||
|
JAN1N6392DIODE SCHOTTKY 45V 54A DO213AA Microchip Technology |
3,264 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/554 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis, Stud Mount | 3000pF @ 5V, 1MHz | - | 2 mA @ 45 V | 45 V | 54A | -55°C ~ 175°C | 680 mV @ 60 A |
|
GP10J-M3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,184 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |