| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMEG3020EGWXDIODE SCHOTTKY 30V 2A SOD123 Nexperia USA Inc. |
401 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 60pF @ 1V, 1MHz | - | 1 mA @ 30 V | 30 V | 2A | 150°C (Max) | 620 mV @ 2 A |
|
SS20100FL_R1_00001SOD-123FL, SKY Panjit International Inc. |
2,204 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 40 µA @ 100 V | 100 V | 2A | -50°C ~ 150°C | 850 mV @ 2 A | |
|
V20100S-E3/4WDIODE SCHOTTKY 100V 20A TO220AB Vishay General Semiconductor - Diodes Division |
995 | - |
RFQ |
Datasheet |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 900 mV @ 20 A |
|
|
RS1MFPDIODE GP 1000V 1.2A SOD123HE onsemi |
2,926 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 0V, 1MHz | 300 ns | 5 µA @ 1000 V | 1000 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A |
|
FFSH50120A1200V 50A SIC SBD onsemi |
2,017 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2560pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 77A (DC) | -55°C ~ 175°C | - | |
|
B140Q-13-FDIODE SCHOTTKY 40V 1A SMA Diodes Incorporated |
3,311 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 1A | -65°C ~ 150°C | 500 mV @ 1 A |
|
RB162M-30TRDIODE SCHOTTKY 30V 1A PMDU Rohm Semiconductor |
367 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 30 V | 30 V | 1A | 150°C (Max) | 520 mV @ 1 A | |
|
STPS2L30ADIODE SCHOTTKY 30V 2A SMA STMicroelectronics |
2,501 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 2A | 150°C (Max) | 450 mV @ 2 A | |
|
FSF10A40DIODE FAST RECOVERY 400V 10A TO- KYOCERA AVX |
422 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 400 V | 400 V | 10A | -40°C ~ 150°C | 1.3 V @ 10 A | |
|
RG 10ADIODE GEN PURP 600V 1A AXIAL Sanken |
3,166 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 500 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 2 V @ 1 A | |
|
UGF5HTHE3/45DIODE GEN PURP 500V 5A ITO220AC Vishay General Semiconductor - Diodes Division |
3,922 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 500 V | 500 V | 5A | -55°C ~ 150°C | 1.75 V @ 5 A |
|
|
JAN1N645-1DIODE GEN PURP 225V 400MA DO35 Microchip Technology |
2,112 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/240 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 nA @ 225 V | 225 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA |
|
GP10MHM3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,796 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
EGP10BHM3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,644 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
MBRF10H100HE3/45DIODE SCHOTTKY 100V 10A ITO220AC Vishay General Semiconductor - Diodes Division |
3,830 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 4.5 µA @ 100 V | 100 V | 10A | -65°C ~ 175°C | 770 mV @ 10 A | |
|
RG 1CDIODE GEN PURP 1KV 700MA AXIAL Sanken |
2,218 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 20 µA @ 1000 V | 1000 V | 700mA | -40°C ~ 150°C | 3.3 V @ 700 mA | |
|
UGF5JT-E3/45DIODE GEN PURP 600V 5A ITO220AC Vishay General Semiconductor - Diodes Division |
3,599 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.75 V @ 5 A | |
|
|
JANTX1N645-1DIODE GEN PURP 225V 400MA DO35 Microchip Technology |
3,342 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/240 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 nA @ 225 V | 225 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA |
|
GP10M-M3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,914 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
EGP10B-M3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,542 | - |
RFQ |
Datasheet |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |