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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MBRF10H45-E3/45DIODE SCHOTTKY 45V 10A ITO220AC Vishay General Semiconductor - Diodes Division |
3,969 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 175°C | 630 mV @ 10 A | |
|
RG 2DIODE GEN PURP 400V 1.2A AXIAL Sanken |
3,221 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 500 µA @ 400 V | 400 V | 1.2A | -40°C ~ 150°C | 1.8 V @ 1.5 A | |
|
|
UGF5JTHE3/45DIODE GEN PURP 600V 5A ITO220AC Vishay General Semiconductor - Diodes Division |
2,196 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.75 V @ 5 A |
|
|
JANTX1N645UR-1DIODE GEN PURP 225V 400MA DO213 Microchip Technology |
3,316 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/240 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 nA @ 225 V | 225 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA |
|
GP10QHM3/54DIODE GEN PURP 1.2KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,991 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 7pF @ 4V, 1MHz | 3 µs | 5 µA @ 1200 V | 1200 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A |
|
|
EGP10CEHM3/73DIODE GEN PURP 150V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,008 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
|
MBRF10H60-E3/45DIODE SCHOTTKY 60V 10A ITO220AC Vishay General Semiconductor - Diodes Division |
2,068 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 175°C | 710 mV @ 10 A | |
|
|
RG 2ADIODE GEN PURP 600V 1A AXIAL Sanken |
2,317 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 500 µA @ 600 V | 600 V | 1A | -40°C ~ 150°C | 2 V @ 1 A | |
|
UH10JT-E3/4WDIODE GEN PURP 600V 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,378 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 25 ns | - | 600 V | 10A | -55°C ~ 175°C | - | |
|
PMEG4010EJ,115DIODE SCHOTTKY 40V 1A SOD323F Nexperia USA Inc. |
2,571 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 1V, 1MHz | - | 100 µA @ 40 V | 40 V | 1A (DC) | 150°C (Max) | 640 mV @ 1 A | |
|
VS-T110HF100DIODE GEN PURP 1KV 110A D-55 Vishay General Semiconductor - Diodes Division |
3,355 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 1000 V | 1000 V | 110A | - | - | |
|
RF05VAM2STRDIODE GEN PURP 200V 500MA TUMD2M Rohm Semiconductor |
2,944 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 500mA | 150°C (Max) | 980 mV @ 500 mA | |
|
BAT43WS-7-FDIODE SCHOTTKY 30V 200MA SOD323 Diodes Incorporated |
2,721 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | -55°C ~ 125°C | 1 V @ 200 mA | |
|
STPS2L40ZFYDIODE SCHOTTKY 40V 2A SOD123F STMicroelectronics |
3,060 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 35 µA @ 40 V | 40 V | 2A | -40°C ~ 175°C | 630 mV @ 2 A |
|
|
FES16HT-E3/45DIODE GEN PURP 500V 16A TO220AC Vishay General Semiconductor - Diodes Division |
990 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 500 V | 500 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A | |
|
RB168VYM-30FHTRSCHOTTKY BARRIER DIODE Rohm Semiconductor |
1,344 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | 4.7 ns | 300 nA @ 30 V | 30 V | 1A | 150°C (Max) | 730 mV @ 1 A |
|
|
VS-T85HFL100S05DIODE GEN PURP 1KV 85A D-55 Vishay General Semiconductor - Diodes Division |
3,235 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 500 ns | 20 mA @ 1000 V | 1000 V | 85A | - | - | |
|
PMEG2010AEH,115DIODE SCHOTTKY 20V 1A SOD123F Nexperia USA Inc. |
2,996 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 5V, 1MHz | - | 200 µA @ 20 V | 20 V | 1A (DC) | 150°C (Max) | 430 mV @ 1 A | |
|
PMEG3005ELD,315DIODE SCHOTTKY 30V 500MA SOD882D Nexperia USA Inc. |
229 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 30pF @ 1V, 1MHz | 6 ns | 500 µA @ 30 V | 30 V | 500mA | 150°C (Max) | 500 mV @ 500 mA | |
|
JANTX1N647-1DIODE GEN PURP 400V 400MA DO35 Microchip Technology |
3,940 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/240 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 nA @ 400 V | 400 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA |
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