| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FES16JTRDIODE GEN PURP 600V 16A TO220AC onsemi |
2,161 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 145pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 16A | -65°C ~ 150°C | 1.5 V @ 8 A | |
|
SSA33LHE3/61TDIODE SCHOTTKY 30V 3A DO214AC Vishay General Semiconductor - Diodes Division |
3,519 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -65°C ~ 150°C | 450 mV @ 3 A | |
|
1N2434DO8 100 AMP SILICON RECTIFIER Solid State Inc. |
3,998 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 50 µA @ 500 V | 500 V | 100A | -65°C ~ 200°C | 1.2 V @ 200 A | ||
|
CMS04(TE12L)DIODE SCHOTTKY 30V 5A MFLAT Toshiba Semiconductor and Storage |
3,214 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 8 mA @ 30 V | 30 V | 5A | -40°C ~ 125°C | 370 mV @ 5 A | |
|
|
1N5402-E3/51DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,507 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
SSB43LHE3/52TDIODE SCHOTTKY 30V 4A DO214AA Vishay General Semiconductor - Diodes Division |
3,515 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 600 µA @ 30 V | 30 V | 4A | -65°C ~ 150°C | 450 mV @ 4 A | |
|
STTH152RLDIODE GEN PURP 200V 1.5A DO15 STMicroelectronics |
3,539 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 32 ns | 1.5 µA @ 200 V | 200 V | 1.5A | 175°C (Max) | 950 mV @ 1.5 A | |
|
FDH600DIODE GEN PURP 50V 200MA DO35 onsemi |
3,175 | - |
RFQ |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Through Hole | 2.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 50 V | 200mA | 175°C (Max) | 1 V @ 200 mA | ||
|
CMS09(TE12L)DIODE SCHOTTKY 30V 1A MFLAT Toshiba Semiconductor and Storage |
3,931 | - |
RFQ |
Datasheet |
Digi-Reel® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 1A | -40°C ~ 150°C | 450 mV @ 1 A | |
|
1N5816RDO4 20 AMP RECTIFIER Solid State Inc. |
3,259 | - |
RFQ |
Datasheet |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 35 ns | 10 µA @ 150 V | 150 V | 20A | -65°C ~ 175°C | 900 mV @ 10 A | |
|
SSC53LHE3/57TDIODE SCHOTTKY 30V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,109 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 700 µA @ 30 V | 30 V | 5A | -65°C ~ 150°C | 450 mV @ 5 A | |
|
FES16CTRDIODE GEN PURP 150V 16A TO220AC onsemi |
2,768 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 950 mV @ 8 A | |
|
CMS11(TE12L)DIODE SCHOTTKY 40V 2A MFLAT Toshiba Semiconductor and Storage |
3,753 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 2A | -40°C ~ 150°C | 550 mV @ 2 A | |
|
SSC54HE3/57TDIODE SCHOTTKY 40V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,439 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 490 mV @ 5 A | |
|
1N3294DO8 100 AMP SILICON RECTIFIER Solid State Inc. |
2,066 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 50 µA @ 800 V | 800 V | 100A | -65°C ~ 200°C | 1.2 V @ 200 A | ||
|
CRH01(TE85L)DIODE SWITCHING 200V 1A SFLAT Toshiba Semiconductor and Storage |
3,937 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 1A | -40°C ~ 150°C | 980 mV @ 1 A | |
|
|
1N5404-E3/51DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,024 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
UH1B-E3/61TDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,367 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 30 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A | |
|
STTH208RLDIODE GEN PURP 800V 2A DO15 STMicroelectronics |
3,921 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 5 µA @ 800 V | 800 V | 2A | 175°C (Max) | 1.65 V @ 2 A | |
|
CRS01(TE85L)DIODE SCHOTTKY 30V 1A SFLAT Toshiba Semiconductor and Storage |
3,023 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1.5 mA @ 30 V | 30 V | 1A | -40°C ~ 125°C | 360 mV @ 1 A |