| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UH1D-E3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,678 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 30 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A | |
|
CRS11(TE85L)DIODE SCHOTTKY 30V 1A SFLAT Toshiba Semiconductor and Storage |
3,643 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1.5 mA @ 30 V | 30 V | 1A | -40°C ~ 125°C | 360 mV @ 1 A | |
|
UH1DHE3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,184 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 30 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
FFB20U60STMDIODE GEN PURP 600V 20A TO263 onsemi |
2,731 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 90 ns | 10 µA @ 600 V | 600 V | 20A | -65°C ~ 150°C | 2.2 V @ 20 A | |
|
BAS21T-7DIODE GEN PURP 200V 200MA SOT523 Diodes Incorporated |
2,988 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Discontinued at Digi-Key | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 200mA | -65°C ~ 150°C | 1.25 V @ 200 mA | |
|
|
1N5408-E3/51DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,704 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
UH2B-E3/52TDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,390 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A | |
|
BAS116T-7DIODE GEN PURP 85V 215MA SOT523 Diodes Incorporated |
3,985 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 2pF @ 0V, 1MHz | 3 µs | 5 nA @ 75 V | 85 V | 215mA (DC) | -65°C ~ 150°C | 1.25 V @ 150 mA | |
|
STTH30L06PDIODE GEN PURP 600V 30A SOD93-2 STMicroelectronics |
2,325 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 90 ns | 25 µA @ 600 V | 600 V | 30A | 175°C (Max) | 1.55 V @ 30 A | |
|
UH2BHE3/52TDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,755 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 35 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
1N3070_T50RDIODE GEN PURP 200V 500MA DO35 onsemi |
2,512 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 175 V | 200 V | 500mA | 175°C (Max) | 1 V @ 100 mA | |
|
BAV116W-7DIODE GEN PURP 130V 215MA SOD123 Diodes Incorporated |
2,821 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 5pF @ 0V, 1MHz | 3 µs | 5 nA @ 75 V | 130 V | 215mA (DC) | -65°C ~ 150°C | 1.25 V @ 150 mA | |
|
IV1D12005O2SIC DIODE, 1200V 5A, TO-220-2 Inventchip |
200 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 320pF @ 1V, 1MHz | 0 ns | 30 µA @ 1200 V | 1200 V | 17A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A | |
|
UH2C-E3/52TDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,839 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A | |
|
MBRD835L-TDIODE SCHOTTKY 35V 8A DPAK Diodes Incorporated |
3,734 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1.4 mA @ 35 V | 35 V | 8A | -65°C ~ 125°C | 510 mV @ 8 A | |
|
UH2CHE3/52TDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,153 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
MBRD1040-TDIODE SCHOTTKY 40V 10A DPAK Diodes Incorporated |
3,563 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 300 µA @ 35 V | 40 V | 10A | -65°C ~ 150°C | 510 mV @ 10 A | |
|
UH2D-E3/52TDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,355 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A | |
|
NTE587D-SI 200V 1A ULTRA FAST NTE Electronics, Inc |
8,538 | - |
RFQ |
Datasheet |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 53pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A | |
|
D8020LDIODE GEN PURP 800V 12.7A TO220 Littelfuse Inc. |
2,085 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 4 µs | 20 µA @ 800 V | 800 V | 12.7A | -40°C ~ 125°C | 1.6 V @ 12.7 A |