| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDH600_T50ADIODE GEN PURP 50V 200MA DO35 onsemi |
3,534 | - |
RFQ |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Through Hole | 2.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 50 V | 200mA | 175°C (Max) | 1 V @ 200 mA | ||
|
UH1BHE3/61TDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,013 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 30 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
1N5812DO4 20 AMP RECTIFIER Solid State Inc. |
3,909 | - |
RFQ |
Datasheet |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 35 ns | 10 µA @ 50 V | 50 V | 20A | -65°C ~ 175°C | 900 mV @ 10 A | |
|
CRS04(TE85L)DIODE SCHOTTKY 40V 1A SFLAT Toshiba Semiconductor and Storage |
3,996 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 1A | -40°C ~ 150°C | 510 mV @ 1 A | |
|
FES16FTDIODE GEN PURP 300V 16A TO220AC onsemi |
2,940 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 170pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 16A | -65°C ~ 150°C | 1.3 V @ 8 A | |
|
UH1C-E3/61TDIODE GEN PURP 150V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,940 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 30 ns | 1 µA @ 150 V | 150 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A | |
|
1N2437DO8 150 AMP SILICON RECTIFIER Solid State Inc. |
2,973 | - |
RFQ |
Datasheet |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 50 µA @ 100 V | 100 V | 150A | -65°C ~ 200°C | 1.1 V @ 200 A | |
|
|
1N5406-E3/51DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,047 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
CRS08(TE85L)DIODE SCHOTTKY 30V 1.5A SFLAT Toshiba Semiconductor and Storage |
2,713 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 1 mA @ 30 V | 30 V | 1.5A | -40°C ~ 125°C | 360 mV @ 1.5 A | |
|
|
STTH2L06RLDIODE GEN PURP 600V 2A DO41 STMicroelectronics |
3,316 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 85 ns | 2 µA @ 600 V | 600 V | 2A | 175°C (Max) | 1.3 V @ 2 A | |
|
FDH600_T50RDIODE GEN PURP 50V 200MA DO35 onsemi |
2,438 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Through Hole | 2.5pF @ 0V, 1MHz | 6 ns | 100 nA @ 50 V | 50 V | 200mA | 175°C (Max) | 1 V @ 200 mA | |
|
1N5815RDO4 20 AMP RECTIFIER Solid State Inc. |
2,242 | - |
RFQ |
Datasheet |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 35 ns | 10 µA @ 125 V | 125 V | 20A | -65°C ~ 175°C | 900 mV @ 10 A | |
|
FES16DTDIODE GEN PURP 200V 16A TO220-2L onsemi |
3,895 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -65°C ~ 150°C | 950 mV @ 8 A | |
|
1N3291RDO8 100 AMP SILICON RECTIFIER Solid State Inc. |
2,750 | - |
RFQ |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | 50 µA @ 400 V | 400 V | 100A | -65°C ~ 200°C | 1.2 V @ 200 A | ||
|
|
1N5407-E3/51DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,065 | - |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
STTH30L06GDIODE GEN PURP 600V 30A D2PAK STMicroelectronics |
2,074 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 90 ns | 25 µA @ 600 V | 600 V | 30A | 175°C (Max) | 1.55 V @ 30 A | |
|
1N3070DIODE GEN PURP 200V 500MA DO35 onsemi |
2,174 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 175 V | 200 V | 500mA | 175°C (Max) | 1 V @ 100 mA | |
|
1N5815DO4 20 AMP RECTIFIER Solid State Inc. |
2,651 | - |
RFQ |
Datasheet |
Box | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | 35 ns | 10 µA @ 125 V | 125 V | 20A | -65°C ~ 175°C | 900 mV @ 10 A | |
|
UH1CHE3/61TDIODE GEN PURP 150V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,744 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 30 ns | 1 µA @ 150 V | 150 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
CRS09(TE85L)DIODE SCHOTTKY 30V 1.5A SFLAT Toshiba Semiconductor and Storage |
3,582 | - |
RFQ |
Datasheet |
Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 50 µA @ 30 V | 30 V | 1.5A | -40°C ~ 150°C | 460 mV @ 1.5 A |