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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDV30E60CDIODE GEN PURP 600V 21A TO22FP Infineon Technologies |
2,328 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 130 ns | 40 µA @ 600 V | 600 V | 21A | -55°C ~ 175°C | 2.05 V @ 30 A | |
|
DTV32-E3/45DIODE GEN PURP 1.5KV 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,123 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 175 ns | 100 µA @ 1500 V | 1500 V | 10A | -55°C ~ 150°C | 1.5 V @ 6 A | |
|
LX2400ILGDIODE GEN PURP 24V 25A 2LGA Microchip Technology |
2,633 | - |
RFQ |
Bulk | IDEALSolar™ | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 250 µA @ 20 V | 24 V | 25A (DC) | -55°C ~ 225°C | 65 mV @ 10 A | |
|
1N4003DIODE GEN PURP 200V 1A DO41 onsemi |
286,179 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
AU2PJHM3/86ADIODE AVALANCHE 600V 1.6A TO277A Vishay General Semiconductor - Diodes Division |
3,794 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 42pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 2 A |
|
BYV25F-600,127DIODE GEN PURP 600V 5A TO220AC WeEn Semiconductors |
3,074 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.9 V @ 5 A | |
|
DTV32B-E3/45DIODE GEN PURP 1.5KV 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,986 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 175 ns | 100 µA @ 1500 V | 1500 V | 10A | -55°C ~ 150°C | 1.5 V @ 6 A | |
|
CDBMH340-HFDIODE SCHOTTKY 40V 3A SOD123T Comchip Technology |
2,707 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 3A (DC) | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
1N4005DIODE GEN PURP 600V 1A DO41 onsemi |
3,577 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
AU2PJHM3/87ADIODE AVALANCHE 600V 1.6A TO277A Vishay General Semiconductor - Diodes Division |
3,765 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 42pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 2 A |
|
BYV25FX-600,127DIODE GEN PURP 600V 5A TO220FP WeEn Semiconductors |
2,093 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.9 V @ 5 A | |
|
|
DTV32F-E3/45DIODE GEN PURP 1.5KV 10A ITO220 Vishay General Semiconductor - Diodes Division |
3,172 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 175 ns | 100 µA @ 1500 V | 1500 V | 10A | -55°C ~ 150°C | 1.5 V @ 6 A | |
|
|
CDBMH360-HFDIODE SCHOTTKY 60V 3A SOD123T Comchip Technology |
3,579 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 3A (DC) | -55°C ~ 150°C | 700 mV @ 3 A | |
|
|
1N4006DIODE GEN PURP 800V 1A DO41 onsemi |
2,378 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
AU2PKHM3/86ADIODE AVALANCHE 800V 1.3A TO277A Vishay General Semiconductor - Diodes Division |
3,154 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 29pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1.3A (DC) | -55°C ~ 175°C | 2.5 V @ 2 A |
|
T484FMODULE POWER Sensata-Crydom |
2,634 | - |
RFQ |
Datasheet |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
DTV56-E3/45DIODE GEN PURP 1.5KV 10A TO220AC Vishay General Semiconductor - Diodes Division |
3,710 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 135 ns | 100 µA @ 1500 V | 1500 V | 10A | -55°C ~ 150°C | 1.8 V @ 6 A | |
|
TSD3GHV7G3A 400V ESD CAPABILITY RECTIFIER Taiwan Semiconductor Corporation |
4,540 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 45pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | - |
|
ST1060DIODE SCHOTTKY 60V TO220AC SMC Diode Solutions |
760 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 850 µA @ 60 V | 60 V | - | -55°C ~ 150°C | 650 mV @ 10 A | |
|
APT10SCD120KDIODE SCHOTTKY 1.2KV 10A TO220 Microchip Technology |
505 | - |
RFQ |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | - | 0 ns | - | 1200 V | 10A | - | 1.5 V @ 10 A |
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