| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STTH310UFYDIODE GEN PURP 1KV 3A SMBFLAT STMicroelectronics |
394 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, ECOPACK®2 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 1000 V | 1000 V | 3A | -40°C ~ 175°C | 1.7 V @ 3 A |
|
|
VS-E5TX3012-M330A, 1200V, "H" SERIES FRED PT I Vishay General Semiconductor - Diodes Division |
500 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 50 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 3.3 V @ 30 A | |
|
FDLL333DIODE GEN PURP 125V 200MA SOD80 onsemi |
651 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 6pF @ 0V, 1MHz | - | 3 nA @ 125 V | 125 V | 200mA | 175°C (Max) | 1.15 V @ 300 mA | |
|
CMR3U-02 TR13 PBFREEDIODE GEN PURP 200V 3A SMC Central Semiconductor Corp |
2,530 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1 V @ 3 A | |
|
CDBMH3100-HFDIODE SCHOTTKY 100V 3A SOD123T Comchip Technology |
2,649 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 200 µA @ 100 V | 100 V | 3A (DC) | -55°C ~ 150°C | 850 mV @ 3 A | |
|
1N4150TRDIODE GEN PURP 50V 200MA DO35 onsemi |
2,115 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Through Hole | 2.5pF @ 0V, 1MHz | 6 ns | 100 nA @ 50 V | 50 V | 200mA | 175°C (Max) | 1 V @ 200 mA | |
|
1N5622GP-E3/73DIODE GEN PURP 1KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,626 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 12V, 1MHz | 2 µs | 500 nA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
AU2PKHM3/87ADIODE AVALANCHE 800V 1.3A TO277A Vishay General Semiconductor - Diodes Division |
2,788 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 29pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1.3A (DC) | -55°C ~ 175°C | 2.5 V @ 2 A |
|
RFUS20TF6SDIODE GEN PURP 600V 20A TO220NFM Rohm Semiconductor |
2,060 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 20A | 150°C (Max) | 2.8 V @ 20 A | |
|
DTV56F-E3/45DIODE GEN PURP 1.5KV 10A ITO220 Vishay General Semiconductor - Diodes Division |
3,938 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 135 ns | 100 µA @ 1500 V | 1500 V | 10A | -55°C ~ 150°C | 1.8 V @ 6 A | |
|
S5Q M3G5A, 1200V, STANDARD RECOVERY REC Taiwan Semiconductor Corporation |
750 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 27pF @ 4V, 1MHz | - | 10 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 150°C | 1.15 V @ 5 A | ||
|
LSIC2SD065A20ASIC SCHOTTKY DIOD 650V 20A TO220 Littelfuse Inc. |
886 | - |
RFQ |
Datasheet |
Tube | Gen2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 960pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 45A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A |
|
SDUR1560DIODE GEN PURP 600V TO220AC SMC Diode Solutions |
980 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | - | -55°C ~ 175°C | 1.7 V @ 15 A | |
|
VS-C04ET07T-M3DIODE SCHOTTKY 650V 4A TO220AC Vishay General Semiconductor - Diodes Division |
495 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 170pF @ 1V, 1MHz | - | 25 µA @ 650 V | 650 V | 4A (DC) | -55°C ~ 175°C | 1.7 V @ 4 A | |
|
BAS29DIODE GEN PURP 120V 200MA SOT23 onsemi |
350 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 50 ns | 100 nA @ 90 V | 120 V | 200mA | 150°C (Max) | 1 V @ 200 mA | |
|
BYC20-600,127DIODE GEN PURP 500V 20A TO220AC WeEn Semiconductors |
5,415 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 200 µA @ 600 V | 500 V | 20A | 150°C (Max) | 2.9 V @ 20 A | |
|
FMY-1106SDIODE GEN PURP 600V 10A TO220F Sanken |
238 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 200 ns | 30 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.15 V @ 10 A | |
|
CFRMT103-HFDIODE GEN PURP 200V 1A SOD123H Comchip Technology |
3,508 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
WNSC101200CWQSILICON CARBIDE POWER DIODE WeEn Semiconductors |
480 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 250pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 10A | 175°C (Max) | 1.6 V @ 5 A | |
|
1N5400DIODE GEN PURP 50V 3A DO201AD onsemi |
3,726 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.2 V @ 3 A |