| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AU2PMHM3/87ADIODE AVALANCHE 1KV 1.3A TO277 Vishay General Semiconductor - Diodes Division |
2,897 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 29pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 1.3A (DC) | -55°C ~ 175°C | 2.5 V @ 2 A |
|
JANTX1N6642USDIODE GEN PURP 75V 300MA D-5D MACOM Technology Solutions |
297 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/578 & /609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 5 ns | 100 µA @ 75 V | 75 V | 300mA | -65°C ~ 175°C | 1.2 V @ 100 mA |
|
MUR420 A0GDIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation |
213 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 65pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 175°C | 890 mV @ 4 A | |
|
|
RR601B4STLDIODE GEN PURP 400V 2A DO214AA Rohm Semiconductor |
2,067 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | - | - | 2 µs | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.15 V @ 2 A | ||
|
|
HS2MA R3GDIODE GEN PURP 1KV 1.5A DO214AC Taiwan Semiconductor Corporation |
994 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 30pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1.5 A | |
|
|
FES16ATHE3/45DIODE GEN PURP 50V 16A TO220AC Vishay General Semiconductor - Diodes Division |
3,645 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 10 µA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A |
|
BAT54TRDIODE SCHOTTKY 30V SOT23 SMC Diode Solutions |
402 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 10pF @ 5V, 1MHz | 5 ns | 1 µA @ 30 V | 30 V | - | 150°C (Max) | 900 mV @ 100 mA | |
|
WNSC04650T6JSILICON CARBIDE POWER DIODE WeEn Semiconductors |
1,943 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 141pF @ 1V, 1MHz | 0 ns | 25 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | ||
|
RD0506LS-SB5DIODE GEN PURP 5A TO220FI onsemi |
2,022 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 50 µA @ 600 V | - | 5A | 150°C (Max) | 1.6 V @ 5 A | |
|
SDUR1020DIODE GEN PURP 200V TO220AC SMC Diode Solutions |
1,000 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 5V, 1MHz | 35 ns | 15 µA @ 200 V | 200 V | - | -55°C ~ 150°C | 1.15 V @ 10 A | |
|
E3D20065D650V AUTOMOTIVE SIC DIODE Wolfspeed, Inc. |
420 | - |
RFQ |
Datasheet |
Tube | E-Series, Automotive | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 459pF @ 0V, 1MHz | 0 ns | 60 µA @ 650 V | 650 V | 56A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
1N5402DIODE GEN PURP 200V 3A DO201AD onsemi |
3,174 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.2 V @ 3 A | |
|
ST15100DIODE SCHOTTKY 100V TO220AC SMC Diode Solutions |
986 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 686pF @ 5V, 1MHz | - | 500 µA @ 100 V | 100 V | - | -55°C ~ 150°C | 750 mV @ 15 A | |
|
BA157GPHE3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,803 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
HS5A R7GDIODE GEN PURP 50V 5A DO214AB Taiwan Semiconductor Corporation |
830 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 5A | -55°C ~ 150°C | 1 V @ 5 A | |
|
|
A1N4007G-GDIODE GEN PURP 1KV 1A DO41 Comchip Technology |
659 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 125°C | 1.1 V @ 1 A |
|
AU3PDHM3/86ADIODE AVALANCHE 200V 1.7A TO277A Vishay General Semiconductor - Diodes Division |
3,495 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Discontinued at Digi-Key | Surface Mount | 72pF @ 4V, 1MHz | 75 ns | 10 µA @ 200 V | 200 V | 1.7A (DC) | -55°C ~ 175°C | 1.9 V @ 3 A |
|
SB1245DIODE SCHOTTKY 45V 12A DO201AD onsemi |
564 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Last Time Buy | Through Hole | - | - | 100 µA @ 45 V | 45 V | 12A | -55°C ~ 150°C | 550 mV @ 12 A | |
|
RSA39LTE25DIODE Rohm Semiconductor |
2,066 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
SDURF2020DIODE GEN PURP 200V ITO220AC SMC Diode Solutions |
1,000 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 15 µA @ 200 V | 200 V | - | -55°C ~ 150°C | 1.15 V @ 20 A |