| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
JANTX1N6640DIODE GEN PURP 50V 300MA MACOM Technology Solutions |
137 | - |
RFQ |
Datasheet |
Bulk | Military, MIL-PRF-19500/578 & /609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 4 ns | 90 µA @ 50 V | 50 V | 300mA (DC) | -65°C ~ 175°C | 1 V @ 200 mA |
|
ST20100DIODE SCHOTTKY 100V TO220AC SMC Diode Solutions |
556 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 100 V | 100 V | - | -55°C ~ 150°C | 750 mV @ 20 A | |
|
SCS304APC9DIODE SCHOTTKY 650V 4A TO220-2 Rohm Semiconductor |
994 | - |
RFQ |
Datasheet |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 200pF @ 1V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 4A (DC) | 175°C (Max) | 1.5 V @ 4 A | |
|
|
SS16LSHRVGDIODE SCHOTTKY 60V 1A SOD123HE Taiwan Semiconductor Corporation |
285 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 400 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
FFSD0665B-F085650V 6A SIC SBD GEN1.5 onsemi |
675 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 259pF @ 1V, 100kHz | 0 ns | 40 µA @ 650 V | 650 V | 9.1A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A | |
|
FMU-G16SDIODE GEN PURP 600V 5A TO220F-2L Sanken |
475 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 400 ns | 50 µA @ 600 V | 600 V | 5A | -40°C ~ 150°C | 1.25 V @ 5 A | |
|
LSIC2SD065E20CCADIODE SCHOTTKY SIC 650V 10A DUAL Littelfuse Inc. |
1,220 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101, GEN2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 470pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 27A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
SS10P6-M3/87ADIODE SCHOTTKY 60V 7A TO277A Vishay General Semiconductor - Diodes Division |
3,180 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 60 V | 60 V | 7A | -55°C ~ 150°C | 550 mV @ 7 A |
|
S1FLB-GS08DIODE GP 100V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
377 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 100 V | 100 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
ACDBA1100LR-HFDIODE SCHOTTKY 100V 1A DO214AC Comchip Technology |
2,204 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | 500 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 750 mV @ 1 A |
|
FMD-G26SDIODE GEN PURP 600V 10A TO220FP Sanken |
377 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 100 µA @ 600 V | 600 V | 10A | -40°C ~ 150°C | 1.7 V @ 10 A | |
|
GP3D020A120BSIC SCHOTTKY DIODE 1200V TO247-2 SemiQ |
1,156 | - |
RFQ |
Datasheet |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1179pF @ 1V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 20A | -55°C ~ 175°C | 1.65 V @ 20 A |
|
|
DTV56L-E3/45DIODE GEN PURP 1.5KV 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,229 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 135 ns | 100 µA @ 1500 V | 1500 V | 10A | -55°C ~ 150°C | 1.8 V @ 6 A | ||
|
CGRMT4001-HFDIODE GEN PURP 50V 1A SOD123H Comchip Technology |
3,769 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
SF38G A0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
253 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
|
1N5401DIODE GEN PURP 100V 3A DO201AD onsemi |
2,156 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.2 V @ 3 A | |
|
CDBU0230R-HFDIODE SCHOTTKY 30V 200MA 0603 Comchip Technology |
101 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 1 µA @ 10 V | 30 V | 200mA | 125°C (Max) | 600 mV @ 200 mA | |
|
SICU0260B-TP650V,2A,SIC SBD,TO-252 PACKAGE Micro Commercial Co |
1,663 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 175pF @ 0V, 1MHz | - | 10 µA @ 650 V | 650 V | 2A | -55°C ~ 175°C | 1.6 V @ 2 A | |
|
BA157GP-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,473 | - |
RFQ |
Datasheet |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
HS3DB R5GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
247 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 80pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |