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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS29-E3/52TDIODE SCHOTTKY 90V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,451 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 90 V | 90 V | 1.5A | -55°C ~ 150°C | 750 mV @ 1 A | |
|
PMEG2015EPK,315DIODE SCHOT 20V 1.5A DFN1608D-2 Nexperia USA Inc. |
2,888 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 1V, 1MHz | 5 ns | 350 µA @ 10 V | 20 V | 1.5A | 150°C (Max) | 420 mV @ 1.5 A | |
|
ES3GHE3_A/HDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,090 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
NSR05T30P2T5GTRENCH SCHOTTKY onsemi |
3,784 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 33pF @ 1V, 1MHz | 9 ns | 85 µA @ 30 V | 30 V | 500mA (DC) | -55°C ~ 150°C | - | |
|
1SS413CT,L3FDIODE SCHOTTKY 20V 50MA SOD882 Toshiba Semiconductor and Storage |
2,651 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 3.9pF @ 0V, 1MHz | - | 500 nA @ 20 V | 20 V | 50mA | -55°C ~ 125°C | 550 mV @ 50 mA | |
|
|
ES2BHE3_A/HDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,902 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 20 ns | 10 µA @ 50 V | 100 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
|
ES2CDIODE GEN PURP 150V 2A DO214AA onsemi |
3,556 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 20 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
STPS3L60UFDIODE SCHOTTKY 60V 3A SMBFLAT STMicroelectronics |
2,074 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 60 V | 60 V | 3A | 150°C (Max) | 620 mV @ 3 A | |
|
BAT54TADIODE SCHOTTKY 30V 200MA SOT23-3 Diodes Incorporated |
3,705 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7.5pF @ 1V, 1MHz | 5 ns | 4 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 400 mV @ 10 mA | |
|
BAS40LSYLBAS40LS/SOD882BD/XSON2 Nexperia USA Inc. |
3,442 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 5pF @ 0V, 1MHz | - | 10 µA @ 40 V | 40 V | 120mA (DC) | 150°C | 1 V @ 40 mA |
|
STTH310DIODE GEN PURP 1KV 3A DO201AD STMicroelectronics |
2,301 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 1000 V | 1000 V | 3A | -40°C ~ 175°C | 1.7 V @ 3 A | |
|
VS-150SQ045TRDIODE SCHOTTKY 45V 15A DO204AR Vishay General Semiconductor - Diodes Division |
2,705 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 900pF @ 5V, 1MHz | - | 1.75 mA @ 45 V | 45 V | 15A | -55°C ~ 150°C | 540 mV @ 15 A | |
|
6A10GHR0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
2,713 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 1.1 V @ 6 A |
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|
SFAS1008G MNGDIODE GEN PURP 600V 10A TO263AB Taiwan Semiconductor Corporation |
3,449 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
|
VI10150SHM3/4WDIODE SCHOTTKY 10A 150V TO-262AA Vishay General Semiconductor - Diodes Division |
3,107 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 150 µA @ 150 V | 150 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A |
|
HER106G R1GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,186 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
CLS02(TE16L,HIT,Q)DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
2,612 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 420pF @ 10V, 1MHz | - | 1 mA @ 40 V | 40 V | 10A (DC) | -40°C ~ 125°C | 0.55 V @ 10 A | |
|
VS-15ETH03STRLPBFDIODE GEN PURP 300V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,500 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 40 ns | 40 µA @ 300 V | 300 V | 15A | -65°C ~ 175°C | 1.25 V @ 15 A |
|
|
6A20G R0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
3,663 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
SFAS1008GHMNGDIODE GEN PURP 600V 10A TO263AB Taiwan Semiconductor Corporation |
3,817 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A |
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