| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CLS03(T6L,CANO-O,QDIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
2,676 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 345pF @ 10V, 1MHz | - | 1 mA @ 60 V | 60 V | 10A (DC) | -40°C ~ 125°C | 0.58 V @ 10 A | |
|
VS-15ETH06STRRPBFDIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,644 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 29 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
|
F1T1GHR0GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
3,191 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
SFAS802G MNGDIODE GEN PURP 100V 8A TO263AB Taiwan Semiconductor Corporation |
2,025 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
VI20120SHM3/4WDIODE SCHOTTKY 20A 120V TO-262AA Vishay General Semiconductor - Diodes Division |
2,549 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 300 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.12 V @ 20 A |
|
VS-6ESH06-M3/86ADIODE GEN PURP 600V 6A TO277A Vishay General Semiconductor - Diodes Division |
3,655 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.8 V @ 6 A |
|
|
ES1DLW RVGDIODE GEN PURP 200V 1A SOD123W Taiwan Semiconductor Corporation |
3,429 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 950 mV @ 1 A | |
|
RF501BM2SFHTLSUPER FAST RECOVERY DIODES Rohm Semiconductor |
2,180 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 1 µA @ 200 V | 200 V | 5A | 150°C (Max) | 920 mV @ 5 A |
|
BAV19WS-HE3-08DIODE GEN PURP 100V 250MA SOD323 Vishay General Semiconductor - Diodes Division |
2,735 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA |
|
BAS116-7-FDIODE GEN PURP 85V 215MA SOT23-3 Diodes Incorporated |
2,611 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 3 µs | 5 nA @ 75 V | 85 V | 215mA (DC) | -65°C ~ 150°C | 1.25 V @ 150 mA | |
|
RFN10BM3STLDIODE GEN PURP 350V 10A TO252 Rohm Semiconductor |
2,517 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 350 V | 350 V | 10A | 150°C (Max) | 1.5 V @ 10 A | |
|
NRVBAF260T3GDIODE SCHOTTKY 60V 2A SMA-FL onsemi |
2,753 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 630 mV @ 2 A |
|
V30K45-01HM3/HDIODE SCHOTTKY 30A 45V FLATPAK Vishay General Semiconductor - Diodes Division |
2,212 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 4000pF @ 4V, 1MHz | - | 2 mA @ 45 V | 45 V | 30A | -40°C ~ 150°C | 630 mV @ 30 A |
|
MMSD4448DIODE GEN PURP 100V 200MA SOD123 onsemi |
2,803 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA | 150°C (Max) | 1 V @ 100 mA | |
|
IMBD4148-HE3-08DIODE GEN PURP 75V 150MA SOT23 Vishay General Semiconductor - Diodes Division |
3,377 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 2.5 µA @ 70 V | 75 V | 150mA | 150°C (Max) | 1 V @ 10 mA |
|
P600D-E3/73DIODE GEN PURP 200V 6A P600 Vishay General Semiconductor - Diodes Division |
2,478 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 200 V | 200 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
SS210-E3/5BTDIODE SCHOTTKY 100V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,802 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 750 mV @ 1 A | |
|
1N5625-TAPDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,257 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 60pF @ 4V, 1MHz | 7.5 µs | 1 µA @ 200 V | 400 V | 3A | -55°C ~ 175°C | 1 V @ 3 A | |
|
RB520CM-30T2RDIODE SCHOTTKY 30V 100MA VMN2M Rohm Semiconductor |
7,688 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 nA @ 10 V | 30 V | 100mA | 150°C (Max) | 450 mV @ 10 mA | |
|
BAT54-HE3-18DIODE SCHOTTKY 30V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,851 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA |