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Diodes-Rectifiers-Single
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CLS03(TE16L,DNSO,QDIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
3,252 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 345pF @ 10V, 1MHz | - | 1 mA @ 60 V | 60 V | 10A (DC) | -40°C ~ 125°C | 0.58 V @ 10 A | |
|
VS-15ETL06STRRPBFDIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,468 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 29 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
|
F1T2GHR0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
2,583 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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|
SFAS803G MNGDIODE GEN PURP 150V 8A TO263AB Taiwan Semiconductor Corporation |
3,512 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
VI20150SHM3/4WDIODE SCHOTTKY 20A 150V TO-262AA Vishay General Semiconductor - Diodes Division |
3,812 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 250 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.43 V @ 20 A |
|
MUR190AHR1GDIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation |
2,523 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A |
|
|
CLS03(TE16L,PCD,Q)DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
3,178 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 345pF @ 10V, 1MHz | - | 1 mA @ 60 V | 60 V | 10A (DC) | -40°C ~ 125°C | 0.58 V @ 10 A | |
|
|
VS-15ETX06STRLPBFDIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,321 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 22 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A |
|
|
F1T3G R0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
2,070 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
SFAS803GHMNGDIODE GEN PURP 150V 8A TO263AB Taiwan Semiconductor Corporation |
3,389 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
|
|
VI30100SGHM3/4WDIODE SCHOTTKY 30A 100V TO-262AA Vishay General Semiconductor - Diodes Division |
2,734 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 350 µA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 1 V @ 30 A |
|
|
SF11G R1GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,502 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
CLS03(TE16L,PSD,Q)DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
3,309 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 345pF @ 10V, 1MHz | - | 1 mA @ 60 V | 60 V | 10A (DC) | -40°C ~ 125°C | 0.58 V @ 10 A | |
|
|
VS-15ETX06STRRPBFDIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,038 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 22 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A |
|
|
F1T3GHR0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
2,263 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SFAS804G MNGDIODE GEN PURP 200V 8A TO263AB Taiwan Semiconductor Corporation |
3,201 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
VI30100SHM3/4WDIODE SCHOTTKY 30A 100V TO-262AA Vishay General Semiconductor - Diodes Division |
3,217 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 910 mV @ 30 A |
|
BYM12-50-E3/96DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,632 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
VS-8ETU04S-M3DIODE GEN PURP 400V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,574 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 8 A |
|
V30K45HM3/HDIODE SCHOTTKY 30A 45V FLATPAK Vishay General Semiconductor - Diodes Division |
2,972 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 4000pF @ 4V, 1MHz | - | 2 mA @ 45 V | 45 V | 30A | -40°C ~ 150°C | 630 mV @ 30 A |
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