| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RF501BGE2STLSUPER FAST RECOVERY DIODE. RF501 Rohm Semiconductor |
2,497 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 1 µA @ 200 V | 200 V | 5A | 150°C | 920 mV @ 5 A | |
|
RGL34D-E3/98DIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,542 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
1N4004-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,217 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
BAS21-E3-08DIODE GEN PURP 200V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
2,109 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 200mA (DC) | -55°C ~ 150°C | 1.25 V @ 200 mA | |
|
|
RGP30J-E3/54DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,535 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
SFAS804GHMNGDIODE GEN PURP 200V 8A TO263AB Taiwan Semiconductor Corporation |
2,276 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
|
|
VI30120SGHM3/4WDIODE SCHOTTKY 30A 120V TO-262AA Vishay General Semiconductor - Diodes Division |
2,988 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.28 V @ 30 A |
|
SF12G R1GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,110 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
VS-18TQ035STRRPBFDIODE SCHOTTKY 18A 35V D2PAK Vishay General Semiconductor - Diodes Division |
3,589 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 35 V | 35 V | 18A | -55°C ~ 175°C | 600 mV @ 18 A | |
|
FR151GHR0GDIODE GEN PURP 50V 1.5A DO204AC Taiwan Semiconductor Corporation |
3,613 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
CLS03(TE16R,Q)DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
3,297 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 345pF @ 10V, 1MHz | - | 1 mA @ 60 V | 60 V | 10A (DC) | -40°C ~ 125°C | 0.58 V @ 10 A | |
|
SFAS805G MNGDIODE GEN PURP 300V 8A TO263AB Taiwan Semiconductor Corporation |
3,645 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
|
VI30120SHM3/4WDIODE SCHOTTKY 30A 120V TO-262AA Vishay General Semiconductor - Diodes Division |
2,335 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.1 V @ 30 A |
|
SF12GHR1GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,742 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
FR152G R0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
2,705 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
VS-19TQ015STRLPBFDIODE SCHOTTKY 19A 15V D2PAK Vishay General Semiconductor - Diodes Division |
3,299 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 2000pF @ 5V, 1MHz | - | 10.5 mA @ 15 V | 15 V | 19A | -55°C ~ 125°C | 360 mV @ 19 A |
|
CLS03,LNITTOQ(ODIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
2,380 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 345pF @ 10V, 1MHz | - | 1 mA @ 60 V | 60 V | 10A (DC) | -40°C ~ 125°C | 0.58 V @ 10 A | |
|
SFAS805GHMNGDIODE GEN PURP 300V 8A TO263AB Taiwan Semiconductor Corporation |
2,004 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
|
|
VI40100GHM3/4WDIODE SCHOTTKY 100V 20A TO262AA Vishay General Semiconductor - Diodes Division |
2,881 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 810 mV @ 20 A |
|
SF13G R1GDIODE GEN PURP 150V 1A DO204AL Taiwan Semiconductor Corporation |
2,391 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |