| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SBRD8835LT4G-VF01DIODE SCHOTTKY 35V 8A DPAK onsemi |
2,483 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.4 mA @ 35 V | 35 V | 8A | -65°C ~ 150°C | 510 mV @ 8 A |
|
RR2LAM6STRDIODE GEN PURP 600V 2A PMDTM Rohm Semiconductor |
3,731 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 600 V | 600 V | 2A | 150°C (Max) | 1.1 V @ 2 A | |
|
STPS745DDIODE SCHOTTKY 45V 7.5A TO220AC STMicroelectronics |
2,861 | - |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 45 V | 45 V | 7.5A | 175°C (Max) | 840 mV @ 15 A | |
|
RFN5BGE2STLSUPER FAST RECOVERY DIODE. RFN5B Rohm Semiconductor |
2,858 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 5A | 150°C | 980 mV @ 5 A | |
|
|
BAT42W RHGDIODE SCHOTTKY 30V 200MA SOD123 Taiwan Semiconductor Corporation |
3,708 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | -55°C ~ 125°C | 1 V @ 200 mA | |
|
RB521SM-30T2RDIODE SCHOTTKY 30V 200MA EMD2 Rohm Semiconductor |
7,217 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 30 µA @ 10 V | 30 V | 200mA | 150°C (Max) | 470 mV @ 200 mA | |
|
DST1040S-ADIODE SCHOTTKY 45V 10A TO277B Littelfuse Inc. |
3,963 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 656pF @ 5V, 1MHz | - | 800 µA @ 45 V | 45 V | 10A | -55°C ~ 150°C | 570 mV @ 10 A |
|
BYM12-400-E3/96DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,692 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
MUR160AHR1GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,672 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |
|
CLS03(T6L,SHINA,Q)DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
3,714 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 345pF @ 10V, 1MHz | - | 1 mA @ 60 V | 60 V | 10A (DC) | -40°C ~ 125°C | 0.58 V @ 10 A | |
|
VS-15ETL06STRLPBFDIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,554 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 29 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
|
F1T2G R0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,626 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
SFAS802GHMNGDIODE GEN PURP 100V 8A TO263AB Taiwan Semiconductor Corporation |
2,469 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
|
|
VI20150SGHM3/4WDIODE SCHOTTKY 20A 150V TO-262AA Vishay General Semiconductor - Diodes Division |
3,468 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A |
|
MUR190A R1GDIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation |
3,931 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
VS-6EWH06FN-M3DIODE GEN PURP 600V 6A TO252AA Vishay General Semiconductor - Diodes Division |
3,206 | - |
RFQ |
Datasheet |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 27 ns | 50 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 2.1 V @ 6 A |
|
VS-8EWX06FNTR-M3DIODE GEN PURP 600V 8A DPAK Vishay General Semiconductor - Diodes Division |
3,666 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 17 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 3 V @ 8 A |
|
1SS355VMFHTE-17HIGH SPEED SWITCHING DIODE, HIGH Rohm Semiconductor |
3,572 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 3pF @ 500mV, 1MHz | 4 ns | 100 nA @ 80 V | 80 V | 100mA | 150°C (Max) | 1.2 V @ 100 mA |
|
NSR0320MW2T3GDIODE SCHOTTKY 20V 1A SOD323 onsemi |
3,782 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 29pF @ 5V, 1MHz | - | 50 µA @ 15 V | 20 V | 1A (DC) | -55°C ~ 125°C | 500 mV @ 900 mA | |
|
BY228-15TAPDIODE AVALANCHE 1.2KV 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,196 | - |
RFQ |
Datasheet |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 2 µs | 5 µA @ 1200 V | 1200 V | 3A | 140°C (Max) | 1.5 V @ 5 A |