| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VI20100SGHM3/4WDIODE SCHOTTKY 20A 100V TO-262AA Vishay General Semiconductor - Diodes Division |
2,096 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 350 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 1.07 V @ 20 A |
|
HER107G R1GDIODE GEN PURP 800V 1A DO204AL Taiwan Semiconductor Corporation |
3,030 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
CLS02(TE16L,SQC,Q)DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
2,860 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 420pF @ 10V, 1MHz | - | 1 mA @ 40 V | 40 V | 10A (DC) | -40°C ~ 125°C | 0.55 V @ 10 A | |
|
VS-15ETH03STRRPBFDIODE GEN PURP 300V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,213 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 40 ns | 40 µA @ 300 V | 300 V | 15A | -65°C ~ 175°C | 1.25 V @ 15 A |
|
6A20GHR0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
3,482 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 6A | -55°C ~ 150°C | 1 V @ 6 A |
|
SFAS801G MNGDIODE GEN PURP 50V 8A TO263AB Taiwan Semiconductor Corporation |
3,771 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
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VI20100SHM3/4WDIODE SCHOTTKY 20A 100V TO-262AA Vishay General Semiconductor - Diodes Division |
2,409 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 900 mV @ 20 A |
|
HER108G R1GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,734 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
CLS02(TE16R,Q)DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
2,443 | - |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 420pF @ 10V, 1MHz | - | 1 mA @ 40 V | 40 V | 10A (DC) | -40°C ~ 125°C | 0.55 V @ 10 A | |
|
VS-15ETH06STRLPBFDIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,013 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 29 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
|
F1T1G R0GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
2,734 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
SFAS801GHMNGDIODE GEN PURP 50V 8A TO263AB Taiwan Semiconductor Corporation |
3,633 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 80pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
|
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VI20120SGHM3/4WDIODE SCHOTTKY 20A 120V TO-262AA Vishay General Semiconductor - Diodes Division |
3,962 | - |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A |
|
ES2DHE3_A/HDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,390 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 20 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
|
RGL34K-E3/83DIODE GEN PURP 800V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,047 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 250 ns | 5 µA @ 800 V | 800 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
|
RFN3BGE2STLSUPER FAST RECOVERY DIODE. RFN3B Rohm Semiconductor |
2,063 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 10 µA @ 200 V | 200 V | 3A | 150°C | 980 mV @ 3 A | |
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B0540W-7-FDIODE SCHOTTKY 40V 500MA SOD123 Diodes Incorporated |
3,177 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 170pF @ 0V, 1MHz | - | 20 µA @ 40 V | 40 V | 500mA | -65°C ~ 150°C | 510 mV @ 500 mA | |
|
BAS19-7-FDIODE GP 100V 200MA SOT23-3 Diodes Incorporated |
3,696 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 200mA | -65°C ~ 150°C | 1.25 V @ 200 mA | |
|
NRVUD320VT4GDIODE GEN PURP 200V 3A DPAK onsemi |
2,949 | - |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A | |
|
MUR160A R1GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,913 | - |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |